Multichannel ultrathin silicon-on-sapphire optical interconnects

被引:17
|
作者
Liu, JJ [1 ]
Kalayjian, Z
Riely, B
Chang, W
Simonis, GJ
Apsel, A
Andreou, A
机构
[1] USA, Res Lab, Adelphi, MD 20783 USA
[2] Johns Hopkins Univ, Dept Elect & Comp Engn, Baltimore, MD 21218 USA
[3] Cornell Univ, Ithaca, NY USA
关键词
optical interconnect; oxide aperture; photodetector (PD); sapphire substrate; silicon-on-sapphire (SOS); vertical-cavity surface-emitting laser (VCSEL);
D O I
10.1109/JSTQE.2003.814182
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Multichannel optical interconnects were developed using vertical-cavity surface-emitting laser (VCSEL) arrays and metal-semiconductor-metal photodetector (PD) arrays and driven by complementary metal-oxide-semiconductor circuits that were fabricated using ultrathin silicon-on-sapphire (SOS) technology. Low-threshold oxide-confined top-emitting VCSEL 8 x 8 arrays were designed and fabricated with off-site contact bonding pads. The arrays were flip-chip bonded to driver arrays on sapphire substrates and mounted on high-speed printed-circuit boards as optical transmitter arrays. The laser output was transmitted through the transparent sapphire substrate and coupled to MSM PD arrays and the SOS receiver. This optical interconnect system was demonstrated to operate at a data rate of 1.0 Gb/s per channel with a power consumption of 28 mW for each channel including transmitter and receiver.
引用
收藏
页码:380 / 386
页数:7
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