Current-induced phase partitioning in eutectic indium-tin pb-free solder interconnect

被引:23
作者
Daghfal, John P.
Shang, J. K. [1 ]
机构
[1] Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
[2] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA
关键词
in-Sn solder; electromigration; current stressing; hillocks; interface;
D O I
10.1007/s11664-007-0206-5
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Structural changes from high-density electric currents were examined in a eutectic In-Sn/Cu interconnect. Under electrical loading, Sn and In migrated in opposite directions, creating a partition of the Sn- and In-rich phases between the anode and the cathode. At the anode, a net gain of Sn atoms resulted in the formation of massive, columnar hillocks on the surface, but a net loss of In led to dissolution and disappearance of the In-rich intermetallic layer. At the cathode, the exodus of Sn left valleys adjacent to the In-rich regions on the surface, while the amount of the In-rich phase grew, due to the net influx of In at the expense of the In-rich intermetallic layer.
引用
收藏
页码:1372 / 1377
页数:6
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