Highly uniform regrown In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes on In0.53Ga0.47As

被引：2
|
作者：
Osaka, J [1 ]
Maezawa, K [1 ]
Yokoyama, H [1 ]
Yamamoto, M [1 ]
机构：
[1] NTT Corp, Syst Elect Labs, Atsugi, Kanagawa 24301, Japan
来源：
1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS | 1998年
关键词：
D O I：
10.1109/ICIPRM.1998.712654
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We studied molecular beam epitaxial (MBE) regrowth of In0.53Ga0.47As on InGaAs and obtained highly uniform regrown resonant tunneling diodes (RTDs) on HEMTs grown by metalorganic chemical vapor deposition (MOCVD) with the peak current standard deviation over a 2" wafer as low as 3%.
引用
收藏
页码：568 / 570
页数：3
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