Low-Frequency Noise in Vertically Stacked Si n-Channel Nanosheet FETs

被引：22

作者：

de Oliveira, Alberto V. ^{[1
]}

Veloso, Anabela ^{[2
]}

Claeys, Cor ^{[3
]}

Horiguchi, Naoto ^{[2
]}

Simoen, Eddy ^{[2
]}

机构：

[1] Univ Tecnol Fed Parana UTFPR, Dept Elect Engn, BR-85902490 Toledo, Brazil

[2] IMEC, B-3001 Heverlee, Belgium

[3] Katholieke Univ Leuven KU Leuven, Dept Elect Engn, B-3001 Heverlee, Belgium

来源：

IEEE ELECTRON DEVICE LETTERS | 2020年 / 41卷 / 03期

关键词：

Carrier number fluctuations; flicker noise; gate-all-around; silicon device; input-referred voltage power spectral density; low-frequency-noise; n-channel; oxide trap density; power spectral density; NANOWIRE TRANSISTORS; 1/F NOISE; ORIENTATION; DENSITY; IMPACT; METAL;

D O I：

10.1109/LED.2020.2968093

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This manuscript presents a systematic low-frequency noise analysis of inversion-mode vertically stacked silicon n-channel nanosheet MOSFETs on bulk wafers. Flicker noise due to carrier number fluctuations is shown as the dominant noise source, which is in line with previous reported studies on gate-all-around (GAA) nanowire nMOSFETs. In addition, the benchmark points out that the vertical stacking approach does not deteriorate the oxide trap density, since its normalized input-referred voltage noise Power Spectral Density at flat-band is lower compared to the data on non-stacked horizontal nanowire nMOSFETs. Another finding is that the Coulomb scattering mechanism dominates the mobility.

引用

页码：317 / 320

页数：4

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