Photoluminescence and Photocurrents of GaS1-xSex Nanobelts

被引：33

作者：

Jung, Chan Su ^{[1
]}

Park, Kidong ^{[1
]}

Shojaei, Fazel ^{[2
,3
]}

Oh, Jin Young ^{[1
]}

Im, Hyung Soon ^{[1
]}

Lee, Jung Ah ^{[1
]}

Jang, Dong Myung ^{[1
]}

Park, Jeunghee ^{[1
]}

Myoung, NoSung ^{[4
]}

Lee, Chang-Lyoul ^{[4
]}

Lee, Jong Woon ^{[5
]}

Song, Jae Kyu ^{[5
]}

Kang, Hong Seok ^{[6
]}

机构：

[1] Korea Univ, Dept Chem, Jochiwon 339700, South Korea

[2] Jeonbuk Natl Univ, Dept Chem & Bioact Mat Sci, Jeonju 560756, South Korea

[3] Jeonbuk Natl Univ, Res Inst Phys & Chem, Jeonju 560756, South Korea

[4] Gwangju Inst Sci & Technol, Adv Photon Res Inst, Gwangju 500712, South Korea

[5] Kyung Hee Univ, Dept Chem, Seoul 130701, South Korea

[6] Jeonju Univ, Coll Engn, Dept Nano & Adv Mat, Jeonju 560759, South Korea

来源：

CHEMISTRY OF MATERIALS | 2016年 / 28卷 / 16期

关键词：

INTERATOMIC DISTANCES; GASE; MOS2; TRANSITION; EMISSION; SPECTROSCOPY; ENHANCEMENT; CRYSTALS; HYBRID; GROWTH;

D O I：

10.1021/acs.chemmater.6b02101

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Two-dimensional layered structures have recently drawn worldwide attention because of their intriguing optical and electrical properties. GaS and GaSe are attractive layered materials owing to their wide band gap. Herein, we synthesized GaS1-xSex belt-type multilayers (nanobelts) with uniform morphology ([2110] hexagonal-phase long axis) by a chemical vapor transport method, and investigate their composition-dependent optical and optoelectronic properties. The GaS1-xSex exhibited strong visible-range photoluminescence at 490-620 nm (2.0-2.5 eV), with a unique composition dependence: longer decay time for the S-rich compositions (x <= 0.5). Photocurrent measurements were performed on individual nanobelts by fabricating photodetector devices; higher photocurrents were found for x <= 0.5. First-principles calculations predicted that oxygen chemisorption can cause the direct and indirect band gaps of GaS to converge, similar to the band structures of GaSe, and thus enhance the optical properties. On the basis of the band alignment (predicted by calculation) for the Schottky barriers in the metal-semiconductor metal photodetector, we proposed the origin of the higher photocurrent for GaS than for GaSe.

引用

页码：5811 / 5820

页数：10

共 52 条

[31] DONOR-ACCEPTOR PAIR RECOMBINATION AND PHONON REPLICA IN GASXSE1-X [J].