Low damage ashing using H2/He plasma for porous ultra low-k

被引：38

作者：

Matsushita, A ^{[1
]}

Ohashi, N ^{[1
]}

Inukai, K ^{[1
]}

Shin, HJ ^{[1
]}

Sone, S ^{[1
]}

Sudou, K ^{[1
]}

Misawa, K ^{[1
]}

Matsumoto, I ^{[1
]}

Kobayashi, N ^{[1
]}

机构：

[1] Semicond Leading Edge Technol Inc, Res Dept 2, Tsukuba, Ibaraki 3058569, Japan

来源：

PROCEEDINGS OF THE IEEE 2003 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2003年

关键词：

D O I：

10.1109/IITC.2003.1219737

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Novel high-temperature (> 150 degreesC) ashing using mixture of H2 and He gases (H2/He) was developed for low damage damascene fabrication of ultra low-k ILDs. Dependence of ashing characteristics on generated plasma configuration and temperature was investigated to optimize the process. Its applications to 320nm pitch Cu/porous-MSQ (k =2.3) interconnects using 300mm wafers showed no degradation in leakage currents and wiring capacitance. It is feasible for precise dual damascene etch using the conventional ArF photo resist (PR) mask process towards 65 nm technology node.

引用

页码：147 / 149

页数：3