Demonstration of the first 10-kV 4H-SiC Schottky barrier diodes

被引：93

作者：

Zhao, JH ^{[1
]}

Alexandrov, P

Li, X

机构：

[1] Rutgers State Univ, Dept Elect & Comp Engn, SiCLAB, Piscataway, NJ 08854 USA

[2] United Silicon Carbide Inc, New Brunswick, NJ 08901 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2003年 / 24卷 / 06期

关键词：

edge termination; high-voltage diode; Schottky diode; SiC diode;

D O I：

10.1109/LED.2003.813370

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter reports the demonstration of the first 4H-SiC Schottky barrier diode (SBD) blocking over 10 kV based on 115-mum n-type epilayer doped to 5.6 x 10(14) cm(-3) through the use of a multistep junction termination extension. The blocking voltage substantially surpasses the former 4H-SiC SBD record of 4.9 kV. A current density of 48 A/cm(2) is achieved with a forward voltage drop of 6 V. The Schottky barrier height, ideality factor, and electron mobility for this very thick epilayer are reported. The SBD's specific-on resistance is also reported.

引用

页码：402 / 404

页数：3

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