Impact of channel mobility on design optimization of 600-3300 V-class high-speed GaN vertical-trench MOSFETs based on TCAD simulation

被引：5

作者：

Ishida, Takashi ^{[1
]}

Sakao, Keisuke ^{[1
]}

Kachi, Tetsu ^{[2
]}

Suda, Jun ^{[1
,2
]}

机构：

[1] Nagoya Univ, Dept Elect, Chikusa Ku, Furo Cho, Nagoya, Aichi 4648601, Japan

[2] Nagoya Univ, Inst Mat & Syst Sustainabil, Chikusa Ku, Furo Cho, Nagoya, Aichi 4648601, Japan

来源：

APPLIED PHYSICS EXPRESS | 2021年 / 14卷 / 09期

关键词：

gallium nitride; switching performance; chip cost; power device; vertical MOSFET; GaN;

D O I：

10.35848/1882-0786/ac18af

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To simultaneously evaluate the switching performance and cost (required chip size) of GaN vertical-trench metal-oxide-semiconductor field-effect transistors, we calculated R (on) AR (on) Q (g) considering the Miller effect with various cell pitches, channel mobilities, and blocking voltages. When the blocking voltage was 600 V, optimized cell pitches of 8 and 12 mu m minimized R (on) AR (on) Q (g) with channel mobilities of 100 and 200 cm(2) V-1 s(-1), respectively. Moreover, a wide range of cell pitches could maintain a low R (on) AR (on) Q (g) with a channel mobility of 200 cm(2) V-1 s(-1). This indicates that a channel mobility of 100 cm(2) V-1 s(-1) or higher, particularly 200 cm(2) V-1 s(-1), is desirable for a good switching performance and low cost.

引用

页数：5