Pulse height of MIP's in an n-side silicon microstrip detector after proton irradiation with a fluence of 1x1015 p cm-2

被引：0

作者：

Gomez, A ^{[1
]}

Kroeger, W ^{[1
]}

Nissen, T ^{[1
]}

Sadrozinski, HFW ^{[1
]}

Wichmann, R ^{[1
]}

Emes, J ^{[1
]}

Gilchriese, MGD ^{[1
]}

Siegrist, J ^{[1
]}

Wappler, F ^{[1
]}

Unno, Y ^{[1
]}

Ohsugi, T ^{[1
]}

机构：

[1] Univ Calif Santa Cruz, SCIPP, Santa Cruz, CA 95064 USA

来源：

1997 IEEE NUCLEAR SCIENCE SYMPOSIUM - CONFERENCE RECORD, VOLS 1 & 2 | 1998年

关键词：

D O I：

暂无

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We have irradiated a n-side silicon microstrip detector with 55 MeV protons up to an equivalent fluence of 1 x 10(15) p cm(-2) high energy protons. We determine the median pulse height to be 0.7 fC at 180 V bias and deduce a depletion region of about 80 mu m.

引用

页码：860 / 863

页数：4