Role of annealing temperature on charge storage characteristics of Au nanocrystals with HfO2 tunneling and blocking layers

被引：2

作者：

Vinod, Arun ^{[1
]}

Rathore, Mahendra Singh ^{[1
]}

Nelamarri, Srinivasa Rao ^{[1
]}

机构：

[1] Malaviya Natl Inst Technol Jaipur, Dept Phys, JLN Marg, Jaipur 302017, Rajasthan, India

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2018年 / 120卷

关键词：

Nonvolatile memory; Nanocrystals; High-k dielectric; Annealing; XPS; RBS; ELECTRICAL-PROPERTIES; HAFNIUM OXIDE; GOLD NANOPARTICLES; OPTICAL-PROPERTIES; FILMS; OXYGEN; DEPOSITION; MECHANISM; GROWTH;

D O I：

10.1016/j.spmi.2018.04.052

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In this paper, we demonstrate the fabrication and charge storage characteristics of Au nanocrystals located between two hafnium oxide films acting as the tunneling and blocking layers serving as nonvolatile memory structure. The structure, composition and electrical properties of the device are drastically affected by annealing temperature. The inter-diffusion and stoichiometric changes of various layers are investigated using X-ray Photoelectron Spectroscopy and Rutherford Backscattering Spectroscopy. Electrical measurements show an improvement in leakage characteristics with annealing. The C-V hysteresis loop with and without Au nanocrystals are compared to understand charge storage behavior of the device structures. The occurrence of well-defined hysteresis loop with Au nanocrystals indicates significant role of Au nanocrystals in charge storage characteristics of the device. (C) 2018 Elsevier Ltd. All rights reserved.

引用

页码：616 / 628

页数：13

共 47 条

[1] Annealing effects on zinc oxide-silica films prepared by sol-gel technique for chemical sensing applications [J].

Ali, Atif Mossad ;

Ismail, Adel A. ;

Najmy, Rasha ;

Al-Hajry, Ali .

THIN SOLID FILMS, 2014, 558 :378-384

[2] Microstructural and plasmonic modifications in Ag-TiO2 and Au-TiO2 nanocomposites through ion beam irradiation [J].

Chakravadhanula, Venkata Sai Kiran ;

Mishra, Yogendra Kumar ;

Kotnur, Venkata Girish ;

Avasthi, Devesh Kumar ;

Strunskus, Thomas ;

Zaporotchenko, Vladimir ;

Fink, Dietmar ;

Kienle, Lorenz ;

Faupel, Franz .

BEILSTEIN JOURNAL OF NANOTECHNOLOGY, 2014, 5 :1419-1431

[3] Developments in nanocrystal memory [J].

Chang, Ting-Chang ;

Jian, Fu-Yen ;

Chen, Shih-Cheng ;

Tsai, Yu-Ting .

MATERIALS TODAY, 2011, 14 (12) :608-615

[4] Ambipolar nonvolatile memory based on a quantum-dot transistor with a nanoscale floating gate [J].

Che, Yongli ;

Zhang, Yating ;

Cao, Xiaolong ;

Song, Xiaoxian ;

Cao, Mingxuan ;

Dai, Haitao ;

Yang, Junbo ;

Zhang, Guizhong ;

Yao, Jianquan .

APPLIED PHYSICS LETTERS, 2016, 109 (01)

[5] X-Ray Photoemission Study of the Oxidation of Hafnium [J].

Chourasia, A. R. ;

Hickman, J. L. ;

Miller, R. L. ;

Nixon, G. A. ;

Seabolt, Andm. A. .

INTERNATIONAL JOURNAL OF SPECTROSCOPY, 2009,

[6] Effect of film thickness and annealing temperature on the structural and optical properties of ZnO thin films deposited on sapphire (0001) substrates by sol-gel [J].

Cui, Lin ;

Wang, Gui-Gen ;

Zhang, Hua-Yu ;

Sun, Rui ;

Kuang, Xu-Ping ;

Han, Jie-Cai .

CERAMICS INTERNATIONAL, 2013, 39 (03) :3261-3268

[7] ALGORITHMS FOR THE RAPID SIMULATION OF RUTHERFORD BACKSCATTERING SPECTRA [J].

DOOLITTLE, LR .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 9 (03) :344-351

[8] Effects of thermal annealing on the charge localization characteristics of HfO2/Au/HfO2 stack [J].

Feng, Xuan ;

Dong, Shurong ;

Wong, Hei ;

Yu, Danqun ;

Pey, K. L. ;

Shubhakar, K. ;

Lau, W. S. .

MICROELECTRONICS RELIABILITY, 2016, 61 :78-81

[9] Synthesis, characterization, and testing of supported Au catalysts prepared from atomically-tailored Au38(SC12H25)24 clusters [J].

Gaur, Sarthak ;

Miller, Jeffrey T. ;

Stellwagen, Daniel ;

Sanampudi, Ashwin ;

Kumar, Challa S. S. R. ;

Spivey, James J. .

PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2012, 14 (05) :1627-1634

[10] Interfacial structure and electrical properties of ultrathin HfO2 dielectric films on Si substrates by surface sol-gel method [J].

Gong, You-Pin ;

Li, Ai-Dong ;

Qian, Xu ;

Zhao, Chao ;

Wu, Di .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 42 (01)

← 1 2 3 4 5 →