Electrical Properties of Sn-Doped α-Ga2O3 Films on m-Plane Sapphire Substrates Grown by Mist Chemical Vapor Deposition

被引：60
作者：
Akaiwa, Kazuaki [1 ]
Ota, Katsuya [1 ]
Sekiyama, Takahito [1 ]
Abe, Tomoki [1 ]
Shinohe, Takashi [2 ]
Ichino, Kunio [1 ]
机构：
[1] Tottori Univ, Dept Informat & Elect Engn, Minami Ku, 4-101 Koyamatyo, Tottori 6808552, Japan
[2] FLOSFIA Corp, Nishikyo Ku, Kyodai Katsura Venture Plaza North Bldg,1-36, Kyoto 6158245, Japan
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2020年 / 217卷 / 03期
关键词：
corundum-structured phases; electrical properties; gallium oxide; mist chemical vapor deposition; EPITAXIAL-GROWTH; THIN-FILMS; SCATTERING;
D O I：
10.1002/pssa.201900632
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Growth and electrical property of conductive Sn-doped alpha-Ga2O3 films on m-plane sapphire by mist chemical vapor deposition (mist-CVD) are exhibited. Although the crystallinity is still inferior in comparison with previously reported alpha-Ga2O3 films on c-plane sapphire, highly crystalline alpha-Ga2O3 films on m-plane sapphire substrates are grown by applying two-step growth procedure. Carrier concentration of Sn-doped alpha-Ga2O3 films is controlled in the range of 10(17)-10(19) cm(-3) by changing the Sn/Ga concentration ratio in source solution. alpha-Ga2O3 films on m-plane sapphires with the thickness of 2 mu m show mobilities as high as 65 cm(2) (V s)(-1), which is much higher than previously reported value of 24 cm(2) (V s)(-1) in the films grown on c-plane sapphire.
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页数：5
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