Effect of the Blocking Oxide Layer With Asymmetric Taper Angles in 3-D NAND Flash Memories (vol 9, pg 774, 2021)

被引：0

作者：

Lee, Jun Gyu ^{[1
]}

Jung, Woo Je ^{[1
]}

Park, Jae Hyeon ^{[1
]}

Yoo, Keon-Ho ^{[2
]}

Kim, Tae Whan ^{[1
]}

机构：

[1] Hanyang Univ, Dept Elect & Comp Engn, Seoul 04763, South Korea

[2] Kyung Hee Univ, Res Inst Basic Sci, Dept Phys, Seoul 02447, South Korea

来源：

关键词：

Flash memories; Electron devices;

D O I：

10.1109/JEDS.2021.3109400

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In [1], the following sentence on p. 774, second column, is revised as follows.

引用

页码：813 / 813

页数：1