Effect of slurry surfactant on nanotopography impact in chemical mechanical polishing

被引：12
|
作者：
Katoh, T
Kim, SJ
Paik, U
Park, JG
机构：
[1] Hanyang Univ, Nano SOI Proc Lab, Seoul 133791, South Korea
[2] Hanyang Univ, Dept Ceram Engn, Seoul 133791, South Korea
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2003年 / 42卷 / 9A期
关键词：
nanotopography; STI; CMP; ceria; slurry; surfactant; power spectral density;
D O I：
10.1143/JJAP.42.5430
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effect of surfactant in a ceria slurry on the impact of nanotopography on post-CMP oxide thickness deviation (OTD) was investigated in a blanket wafer study. The ceria slurry was prepared using the solid-state displacement reaction method and an anionic organic surfactant was added with the concentration from 0 to 0.8 wt%. Under the condition of a fixed removal depth, the magnitude of post-CMP OTD due to nanotopography increased with the surfactant concentration in the slurry, demonstrating that the impact of nanotopography can be controlled using the slurry characteristics.
引用
收藏
页码：5430 / 5432
页数：3
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