An N-Heterocyclic Carbene Based Silver Precursor for Plasma-Enhanced Spatial Atomic Layer Deposition of Silver Thin Films at Atmospheric Pressure

被引：24
作者：
Boysen, Nils [1 ]
Hasselmann, Tim [2 ]
Karle, Sarah [1 ]
Rogalla, Detlef [3 ]
Theirich, Detlef [2 ]
Winter, Manuela [1 ]
Riedl, Thomas [2 ]
Devi, Anjana [1 ]
机构：
[1] Ruhr Univ Bochum, Chair Inorgan Chem 2, Inorgan Mat Chem, Univ Str 150, D-44801 Bochum, Germany
[2] Univ Wuppertal, Inst Elect Devices, Rainer Gruenter Str 21, D-42119 Wuppertal, Germany
[3] Ruhr Univ Bochum, RUBION, D-44801 Bochum, Germany
来源：
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION | 2018年 / 57卷 / 49期
关键词：
N-heterocyclic carbenes; plasma-enhanced atomic layer deposition; silver; thin films; COMPLEXES; NANOPARTICLES; COPPER;
D O I：
10.1002/anie.201808586
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
A new N-heterocyclic carbene (NHC)-based silver amide compound, 1,3-di-tert-butyl-imidazolin-2-ylidene silver(I) 1,1,1-trimethyl-N-(trimethylsilyl)silanaminide [(NHC)Ag-(hmds)] was synthesized and analyzed by single-crystal X-ray diffraction, H-1 and (CNMR)-C-13 spectroscopy, as well as EI mass spectrometry, and subsequently evaluated for its thermal characteristics. This new halogen- and phosphine-free Ag atomic layer deposition (ALD) precursor was tested successfully for silver thin film growth in atmospheric pressure plasma enhanced spatial (APP-ALD). High-purity conductive Ag thin films with a low sheet resistance of 0.9 Omega/sq (resistivity: 10(-5) Omega cm) were deposited at 100 degrees C and characterized by X-ray photoelectron spectroscopy, scanning electron microscopy, optical transmittance, and Rutherford back-scattering techniques. The carbene-based Ag precursor and the new APP-ALD process are significant developments in the field of precursor chemistry as well as metal ALD processing.
引用
收藏
页码：16224 / 16227
页数：4
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