Dynamics of 4H-SiC plasticity

被引：0

作者：

Karpov, SY

Kulik, AV

Ramm, MS

Makarov, YN

机构：

[1] Soft Impact Ltd, RU-194156 St Petersburg, Russia

[2] STR Inc, Richmond, VA 23255 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS - 2002 | 2002年 / 433-4卷

关键词：

4H-SiC; dislocations; loading tests; plasticity; yield stress;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We suggest a simplified analytical model of SiC plasticity involving both multiplication of gliding dislocations and their generation in the crystal bulk. A unified set of model parameters is determined for 4H-SiC and a correlation between the multiplication factor and the critical resolved shear stress is found by comparing the theoretical predictions with the reported data on uniaxial loading of the bulk crystals. The model is workable in a wide range of temperature and strain rate variation.

引用

页码：297 / 300

页数：4

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