Artificial Synapses Based on Lead-Free Perovskite Floating-Gate Organic Field-Effect Transistors for Supervised and Unsupervised Learning

被引:55
|
作者
Wang, Ruizhi [1 ]
Chen, Pengyue [2 ]
Hao, Dandan [1 ]
Zhang, Junyao [1 ]
Shi, Qianqian [1 ]
Liu, Dapeng [1 ]
Li, Li [1 ]
Xiong, Lize [3 ]
Zhou, Junhe [2 ]
Huang, Jia [1 ,3 ]
机构
[1] Tongji Univ, Sch Mat Sci & Engn, Shanghai Inst Intelligent Sci & Technol, Interdisciplinary Mat Res Ctr, Shanghai 201804, Peoples R China
[2] Tongji Univ, Sch Elect & Informat Engn, Shanghai 201804, Peoples R China
[3] Tongji Univ, Shanghai Peoples Hosp 4, Translat Res Inst Brain & Brain Intelligence, Shanghai 200434, Peoples R China
基金
中国国家自然科学基金;
关键词
artificial synapses; lead-free perovskites; floating gate; organic transistors; neuromorphic computing; MEMORY; ARRAY;
D O I
10.1021/acsami.1c08424
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Synaptic devices are expected to overcome von Neumann's bottleneck and served as one of the foundations for future neuromorphic computing. Lead halide perovskites are considered as promising photoactive materials but limited by the toxicity of lead. Herein, lead-free perovskite CsBi3I10 is utilized as a photoactive material to fabricate organic synaptic transistors with a floating-gate structure for the first time. The devices can maintain the I-light/I-dark ratio of 10(3) for 4 h and have excellent stability within the 30 days test even without encapsulation. Synaptic functions are successfully simulated. Notably, by combining the decent charge transport property of the organic semiconductor and the excellent photoelectronic property of CsBi3I10, synaptic performance can be realized even with an operating voltage as low as -0.01 V, which is rare among floating-gate synaptic transistors. Furthermore, artificial neural networks are constructed. We propose a new method that can simulate the synaptic weight value in multiple digit form to achieve complete gradient descent. The image recognition test exhibits thrilling recognition accuracy for both supervised (91%) and unsupervised (81%) classifications. These results demonstrate the great potential of floating-gate organic synaptic transistors in neuromorphic computing.
引用
收藏
页码:43144 / 43154
页数:11
相关论文
共 50 条
  • [21] Property Modulation of Two-Dimensional Lead-Free Perovskite Thin Films by Aromatic Polymer Additives for Performance Enhancement of Field-Effect Transistors
    Zhang, Fan
    Zhang, Quan
    Liu, Xin
    Hu, Yufeng
    Lou, Zhidong
    Hou, Yanbing
    Teng, Feng
    ACS APPLIED MATERIALS & INTERFACES, 2021, 13 (20) : 24272 - 24284
  • [22] Controllable Shifts in Threshold Voltage of Top-Gate Polymer Field-Effect Transistors for Applications in Organic Nano Floating Gate Memory
    Baeg, Kang-Jun
    Noh, Yong-Young
    Sirringhaus, Henning
    Kim, Dong-Yu
    ADVANCED FUNCTIONAL MATERIALS, 2010, 20 (02) : 224 - 230
  • [23] High-Mobility and Bias-Stable Field-Effect Transistors Based on Lead-Free Formamidinium Tin Iodide Perovskites
    Zhou, Zhiwen
    Li, Qihua
    Chen, Mojun
    Zheng, Xuerong
    Wu, Xiao
    Lu, Xinhui
    Tao, Shuxia
    Zhao, Ni
    ACS ENERGY LETTERS, 2023, 8 (10) : 4496 - 4505
  • [24] Organic field-effect transistor nonvolatile memories based on hybrid nano-floating-gate
    Gao, Xu
    She, Xiao-Jian
    Liu, Chang-Hai
    Sun, Qi-Jun
    Liu, Jie
    Wang, Sui-Dong
    APPLIED PHYSICS LETTERS, 2013, 102 (02)
  • [25] A floating-gate field-effect transistor memory device based on organic crystals with a built-in tunneling dielectric by a one-step growth strategy
    Chen, Zichen
    Chen, Shuai
    Jiang, Tianhao
    Chen, Shuang
    Jia, Ruofei
    Xiao, Yanling
    Pan, Jing
    Jie, Jiansheng
    Zhang, Xiujuan
    NANOSCALE, 2024, 16 (07) : 3721 - 3728
  • [26] Photonic Synapses with Ultra-Low Energy Consumption Based on Vertical Organic Field-Effect Transistors
    Chen, Tianqi
    Wang, Xin
    Hao, Dandan
    Dai, Shilei
    Ou, Qingqing
    Zhang, Junyao
    Huang, Jia
    ADVANCED OPTICAL MATERIALS, 2021, 9 (08)
  • [27] Parylene-Based Double-Layer Gate Dielectrics for Organic Field-Effect Transistors
    Park, Hyunjin
    Ahn, Hyungju
    Kwon, Jimin
    Kim, Seongju
    Jung, Sungjune
    ACS APPLIED MATERIALS & INTERFACES, 2018, 10 (44) : 37767 - 37772
  • [28] Development of Enzymatic Sensors Based on Extended-gate-type Organic Field-effect Transistors
    Minami, Tsuyoshi
    Minamiki, Tsukuru
    Sasaki, Yui
    ELECTROCHEMISTRY, 2018, 86 (06) : 303 - 308
  • [29] The electrical characteristics of pentacene-based organic field-effect transistors with polymer gate insulators
    Kang, GW
    Park, KM
    Song, JH
    Lee, CH
    Hwang, DH
    CURRENT APPLIED PHYSICS, 2005, 5 (04) : 297 - 301
  • [30] Optimization and performance indication of surrounding gate tunnel field-effect transistors based on machine learning
    Charumathi, V
    Balamurugan, N. B.
    Suguna, M.
    Kumar, D. Sriram
    INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS, 2024, 37 (03)