High-Performance Dual-Mode Solar-Blind Sensor of a Si-Doped β-Ga2O3 Trench Schottky Photodiode

被引：25
作者：
Jiang, Wei-Yu [1 ]
Liu, Zeng [2 ,3 ,4 ]
Li, Shan [1 ]
Yan, Zu-Yong [1 ]
Lu, Cheng-Ling [1 ]
Li, Pei-Gang [1 ]
Guo, Yu-Feng [2 ,3 ,4 ]
Tang, Wei-Hua [2 ,3 ,4 ]
机构：
[1] Beijing Univ Posts & Telecommun BUPT, Sch Sci, Lab Informat Funct Mat & Devices, Beijing 100876, Peoples R China
[2] Nanjing Univ Posts & Telecommun, Coll Elect & Opt Engn, Nanjing 210023, Peoples R China
[3] Nanjing Univ Posts & Telecommun, Coll Microelect, Nanjing 210023, Peoples R China
[4] Nanjing Univ Posts & Telecommun, Natl & Local Joint Engn Lab RF Integrat & Micropa, Nanjing 210023, Peoples R China
来源：
IEEE SENSORS JOURNAL | 2021年 / 21卷 / 17期
基金：
中国国家自然科学基金;
关键词：
beta-Ga2O3:Si; trench Schottky contact; photodiode; solar-blind sensing; ULTRAVIOLET PHOTODETECTORS; JUNCTION;
D O I：
10.1109/JSEN.2021.3087715
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, a Si-doped beta-Ga2O3 trench Schottky photodiode has been designed and fabricated. This photodiode works as a dual-mode solar-blind ultraviolet sensor with a photo-to-dark current ratio (PDCR) of 3.93 x 10(5), a responsivity (R) of 152.63 MW, an external quantum efficiency (EQE) of 74653%, rise and decay time of 0.06 s and 0.06 s, under the irradiation of 254 nm ultraviolet light with intensity of 200 mu W.cm(-2). Moreover, it has the potential to be a self-powered photodetector at zero bias. In general, this trench Schottky contact design has a good developing prospect in the field of ultraviolet solar-blind detection with high performances.
引用
收藏
页码：18663 / 18669
页数：7
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