Modeling and measurement of longitudinal gain dynamics in saturated semiconductor optical amplifiers of different length

被引：57

作者：

Gutiérrez-Castrejón, R ^{[1
]}

Schares, L ^{[1
]}

Occhi, L ^{[1
]}

Guekos, G ^{[1
]}

机构：

[1] ETH Honggerberg, Swiss Fed Inst Technol Zurich, Inst Quantum Elect, CH-8093 Zurich, Switzerland

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2000年 / 36卷 / 12期

关键词：

charge carrier lifetime; dynamics; gain measurement; optical pulses; recovery time; semiconductor lasers; semiconductor optical amplifiers; spontaneous emission;

D O I：

10.1109/3.892569

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new frequency-domain wave-propagation model that includes a position- and time-dependent carrier lifetime and the effect of amplified spontaneous emission is introduced and used to accurately simulate recovery time experiments in 0.5- and 1.0-mm long semiconductor optical amplifiers. It is compared to a constant lifetime model at different saturation levels, shelving better performance and consistency. The role of the amplified spontaneous emission in saturated amplifiers is also discussed.

引用

页码：1476 / 1484

页数：9

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