Observation of anisotropic initial growth nucleation in liquid phase epitaxy of InP

被引：13
作者：
Oyama, Y
Suzuki, T
Suto, K
Nishizawa, JI [1 ]
机构：
[1] Semicond Res Fdn, Semicond Res Inst, Aoba Ku, Sendai, Miyagi 9800862, Japan
[2] Tohoku Univ, Grad Sch Engn, Dept Mat Sci & Engn, Sendai, Miyagi 9808579, Japan
[3] Telecommun Advancement Org Japan, Sendai Res Ctr, Sendai, Miyagi 9800845, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2001年 / 222卷 / 1-2期
关键词：
InP; liquid phase epitaxy; defect-free nucleation; low temperature growth; anisotropy; migration;
D O I：
10.1016/S0022-0248(00)00910-6
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Liquid-phase epitaxial growth of InP was performed at constant growth temperature by the temperature difference method under controlled vapor pressure on InP substrates. Growth temperature was kept constant from 550 degreesC to 280 degreesC, The as-grown surface morphology was investigated by Nomarski interference optical microscope and electron microscope. The anisotropic initial growth nuclei are investigated on {0 0 1},{1 1 1}A,B and {1 1 0} oriented InP substrates. This anisotropic behavior is discussed in view of the anisotropy of lateral growth rate due to the preferential surface migration and sticking at specific kinks and steps on the surface. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：64 / 73
页数：10
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