On the degenerate semiconductors

被引：0

作者：

Portier, J ^{[1
]}

Campet, G ^{[1
]}

Salardenne, J ^{[1
]}

Marcel, C ^{[1
]}

机构：

[1] UNIV BORDEAUX 1,LEMME,F-33405 TALENCE,FRANCE

来源：

COMPTES RENDUS DE L ACADEMIE DES SCIENCES SERIE II FASCICULE B-MECANIQUE PHYSIQUE CHIMIE ASTRONOMIE | 1996年 / 322卷 / 04期

关键词：

D O I：

暂无

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

The acid strength of cations, determined with the ICP parameter (lonic Covalent Parameter): ICP = log P - 1.38 chi + 2.07 where P is the cationic polarizing power and chi its electronegativity, expresses the competition between the covalent and ionic forces in oxides. With this model, applied to the degenerate semiconductors based on indium oxide and tin oxide, their electrical performances can be predicted.

引用

页码：343 / 346

页数：4

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