SiO2 formation at the aluminum Oxide/Si(100) interface

被引:0
作者
Chowdhuri, AR [1 ]
Takoudis, CG [1 ]
Klie, RF [1 ]
Browning, ND [1 ]
机构
[1] Univ Illinois, Dept Chem Engn, Chicago, IL 60607 USA
来源
CRYSTALLINE OXIDE-SILICON HETEROSTRUCTURES AND OXIDE OPTOELECTRONICS | 2003年 / 747卷
关键词
D O I
暂无
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Thin films of aluminum oxide were deposited on clean Si(100) substrates using trimethylaluminum and oxygen at 300degreesC. Infrared spectroscopic and x-ray photoelectron spectroscopic analyses of these films showed no aluminum silicate or SiO2 phase formation at the film/substrate interface. The O/Al ratio in the as deposited film was found to be higher than that in stoichiometric Al2O3, On annealing the as deposited samples in Ar at higher temperatures, a peak due to the transverse optical phonon for the Si-O-Si stretching mode appeared in the infrared spectra. A combination of Z-contrast imaging and electron energy loss spectroscopy in the scanning transmission electron microscope confirmed that the annealed samples developed a layer of silicon dioxide at the aluminum oxide-Si interface. Z-contrast images and electron energy loss spectra, obtained while heating the sample inside the scanning transmission electron microscope were used to follow the interfacial SiO2 formation.
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页码:335 / 340
页数:6
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