Multiharmonic triband load coupling network using only transmission-lines for switching-mode power amplifiers

被引:0
|
作者
Kalim, Danish [1 ]
Negra, Renato [1 ]
机构
[1] Rhein Westfal TH Aachen, UMIC Res Ctr, Mixed Signal CMOS Circuits, D-52056 Aachen, Germany
关键词
Class-E; GaN HEMT; triband; optimum impedances; output power; power added efficiency (PAE);
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Future multistandard multiband mobile communication terminals demand highly efficient multiband power amplifiers (PAs). In this contribution, for the first time, the design of a compact planar multiharmonic load transformation network (MHLTN) to realise triband highly efficient power amplifiers (PAs) is reported. The proposed switchless MHLTN comprising only transmission-lines is capable to obtain impedance terminations at three distinct bands including up to three corresponding harmonics. The concept of inserting high impedance stubs at specific locations of the network to properly terminate the required harmonic frequencies was used. The idea was validated by implementing a class-E PA using a GaN High Electron Mobility Transistor (HEMT) in a hybrid design for GSM750, GSM1810 and LTE2655 operation. The measured impedances of the passive MHLTN for a triband class-E load coupling network are in good agreement with the desired results. With a triband input matching network, the measurement results have shown 74.0 %, 61.4 % and 46.8 % peak power added efficiency (PAE) with an output power of 40.7 dBm, 39.3 dBm and 38.3 dBm in the lower, middle and upper bands, respectively.
引用
收藏
页码:155 / 158
页数:4
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