ENHANCED CHARGE CARRIER CONCENTRATION OF SIC/CNT WITH N- AND P-TYPE DOPING AGENTS

被引:0
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作者
Edwards, Kyle [1 ]
Khan, Mujibur [1 ]
Quirino, Rafael [1 ]
Beckler, Brenda [1 ]
Absar, Saheem [1 ]
机构
[1] Georgia So Univ, Statesboro, GA 30460 USA
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中图分类号
TH [机械、仪表工业];
学科分类号
0802 ;
摘要
(S)ingle-walled Carbon nandtubes (SWCNTs) have been shown to have excellent conductive properties. SWCNTs were dispersed in a SiC nanoparticle matrix to form a homogeneous mixture that is both mechanically durable and conductive. The SWCNT amount has been varied. SiC/SWCNT mixtures were then doped with various N- and P-type agents, and the resulting samples were analyzed by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), and X-ray diffraction (XRD). Raman spectra of the samples were also measured for evidence of structural changes. Seebeck coefficients were measured for the doped samples demonstrating the change in thermoelectric properties. Shifts in the G peak (1580.6 cm-1) of the Raman spectra of the samples provides evidence of an increase in charge carrier concentration in the doped samples, correlating well with the Seebeck coefficient results.
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页数:5
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