The influence of quantum effects on spatial distribution of carriers in surrounding-gate cylindrical MOSFETs

被引：0

作者：

Sasic, R. M. ^{[2
]}

Lukic, P. M. ^{[1
]}

Ostojic, S. M. ^{[2
]}

Alkoash, A. ^{[2
]}

机构：

[1] Univ Belgrade, Fac Mech Engn, Belgrade 11120, Serbia

[2] Univ Belgrade, Fac Technol & Met, Belgrade 11120, Serbia

来源：

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2010年 / 12卷 / 05期

关键词：

Analytical model; Spatial carriers distribution; Surrounding-gate MOSFET; Quantum effects; Transport equation;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The previously developed model describing quantum correction of carriers' concentration spatial distribution in ultra small MOS/MOD devices has been applied to Surrounding-Gate Cylindrical MOSFETs. The inevitable role of quantum effects over almost the entire sample has been confirmed and supported by numerical calculations for a specific set of geometrical parameters.

引用

页码：1161 / 1164

页数：4