The influence of quantum effects on spatial distribution of carriers in surrounding-gate cylindrical MOSFETs

被引：0
|
作者：
Sasic, R. M. [2 ]
Lukic, P. M. [1 ]
Ostojic, S. M. [2 ]
Alkoash, A. [2 ]
机构：
[1] Univ Belgrade, Fac Mech Engn, Belgrade 11120, Serbia
[2] Univ Belgrade, Fac Technol & Met, Belgrade 11120, Serbia
来源：
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2010年 / 12卷 / 05期
关键词：
Analytical model; Spatial carriers distribution; Surrounding-gate MOSFET; Quantum effects; Transport equation;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The previously developed model describing quantum correction of carriers' concentration spatial distribution in ultra small MOS/MOD devices has been applied to Surrounding-Gate Cylindrical MOSFETs. The inevitable role of quantum effects over almost the entire sample has been confirmed and supported by numerical calculations for a specific set of geometrical parameters.
引用
收藏
页码：1161 / 1164
页数：4
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