Magnetic properties of IV-VI compound GeTe based diluted magnetic semiconductors

被引：48

作者：

Fukuma, Y ^{[1
]}

Asada, H ^{[1
]}

Miyashita, J ^{[1
]}

Nishimura, N ^{[1
]}

Koyanagi, T ^{[1
]}

机构：

[1] Yamaguchi Univ, Dept Symbiot Environm Syst Engn, Grad Sch Sci & Engn, Ube, Yamaguchi 7558611, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 93卷 / 10期

关键词：

D O I：

10.1063/1.1556113

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Magnetic properties of IV-VI compound GeTe based diluted magnetic semiconductors with 3d transition metals from Ti to Ni have been investigated. Ferromagnetic order is observed for the Cr, Mn, and Fe doped GeTe films, whereas the Ti, V, Co, and Ni doped films are paramagnetic. The ferromagnetic order could give rise to p-d exchange interaction because amplitudes of negative magnetoresistance and the anomalous Hall effect are proportional to that of spontaneous magnetization. The Curie temperatures determined by extrapolating the steep linear part of the temperature dependence of the squared residual magnetization for the Cr, Mn, and Fe doped GeTe films are 12, 47, and 100 K, respectively. (C) 2003 American Institute of Physics.

引用

页码：7667 / 7669

页数：3

共 14 条

[1] THE MAGNETIC PROPERTIES AND PHASE DIAGRAM OF IRON TELLURIUM SYSTEM [J].