Effect of oxygen partial pressure on oxidation rate of Si-C-O fiber

被引:22
作者
Shimoo, T [1 ]
Toyoda, F [1 ]
Okamura, K [1 ]
机构
[1] Osaka Prefecture Univ, Dept Met & Mat Sci, Coll Engn, Osaka 5998531, Japan
关键词
Si-C-O fiber (Nicalon); oxidation kinetics; oxygen partial pressure; oxidation mechanism;
D O I
10.2109/jcersj.106.447
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The oxidation mechanism of Si-C-O fiber (Nicalon) has been investigated by considering the effect of partial pressure and temperature on the oxidation rate. The kinetic data of Nicalon were described by the two-dimensional disc-contracting formula. The rate constants were proportional to the partial pressure of O-2. In earliest stage of oxidation, the rate equation for reaction control was applicable and the activation energy was estimated to be 45 kJ/mol. The initial oxidation of Nicalon is considered to be determined by both the gas-phase diffusion and chemical reaction. When the fiber was completely coated with SiO2 film, the oxidation rate obeyed the equation for diffusion control and the activation energy was 102 kJ/mol. It is considered that the rate-determining step is the diffusion of oxygen molecules through the pores of SiO2 film.
引用
收藏
页码:447 / 451
页数:5
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