Localised exciton transitions in high-quality GaAs/AlGaAs quantum wells

被引:0
|
作者
Steffan, AG [1 ]
García-Cristóbal, A [1 ]
Phillips, RT [1 ]
Ritchie, DA [1 ]
机构
[1] Cavendish Lab, Cambridge CB3 0HE, England
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We investigate the origin of optical interband transitions in high-quality GaAs/AlGaAs quantum wells. Using a novel microphotoluminescence technique based on the excitation and collection through a standard single-mode fibre, we are able to detect very narrow emission lines. Furthermore a model describing the localisation at quantum well interfaces is developed, which gives more insight into the nature of the states involved in optical emission.
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页码:533 / 534
页数:2
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