Localised exciton transitions in high-quality GaAs/AlGaAs quantum wells

被引：0

作者：

Steffan, AG ^{[1
]}

García-Cristóbal, A ^{[1
]}

Phillips, RT ^{[1
]}

Ritchie, DA ^{[1
]}

机构：

[1] Cavendish Lab, Cambridge CB3 0HE, England

来源：

PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigate the origin of optical interband transitions in high-quality GaAs/AlGaAs quantum wells. Using a novel microphotoluminescence technique based on the excitation and collection through a standard single-mode fibre, we are able to detect very narrow emission lines. Furthermore a model describing the localisation at quantum well interfaces is developed, which gives more insight into the nature of the states involved in optical emission.

引用

页码：533 / 534

页数：2

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