Localised exciton transitions in high-quality GaAs/AlGaAs quantum wells

被引：0

作者：

Steffan, AG ^{[1
]}

García-Cristóbal, A ^{[1
]}

Phillips, RT ^{[1
]}

Ritchie, DA ^{[1
]}

机构：

[1] Cavendish Lab, Cambridge CB3 0HE, England

来源：

PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigate the origin of optical interband transitions in high-quality GaAs/AlGaAs quantum wells. Using a novel microphotoluminescence technique based on the excitation and collection through a standard single-mode fibre, we are able to detect very narrow emission lines. Furthermore a model describing the localisation at quantum well interfaces is developed, which gives more insight into the nature of the states involved in optical emission.

引用

页码：533 / 534

页数：2

共 50 条

[1] GROWTH AND CHARACTERIZATION OF HIGH-QUALITY MOCVD ALGAAS/GAAS SINGLE QUANTUM WELLS
DUPUIS, RD
MILLER, RC
PETROFF, PM
JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 398 - 405
[2] HIGH-QUALITY GAAS/ALGAAS QUANTUM-WELLS ON GAAS (111)B SUBSTRATES GROWN BY MOVPE
KATO, K
HASUMI, Y
KOZEN, A
TEMMYO, J
GALLIUM ARSENIDE AND RELATED COMPOUNDS 1988, 1989, : 169 - 170
[3] HIGH-QUALITY GAAS/ALGAAS QUANTUM-WELLS ON GAAS (111)B SUBSTRATES GROWN BY MOVPE
KATO, K
HASUMI, Y
KOZEN, A
TEMMYO, J
INSTITUTE OF PHYSICS CONFERENCE SERIES, 1989, (96): : 169 - 170
[4] EXCITON-TRANSITIONS AND PHOTOVOLTAIC SPECTRA IN GAAS/ALGAAS MULTIPLE QUANTUM-WELLS
GHEZZI, C
PARISINI, A
TARRICONE, L
FILIPOWICZ, J
GENOVA, F
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1991, 9 (1-3): : 301 - 305
[5] Observation of exciton-LO-phonon scattering suppression in a high-quality AlGaAs/GaAs quantum wire
Wang, XL
Ogura, M
2001 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS, 2000, : 263 - 266
[6] Modeling of Exciton Exchange Interaction in GaAs/AlGaAs Quantum Wells
Khramtsov, E. S.
Gribakin, B. F.
Trifonov, A., V
Ignatiev, I., V
SEMICONDUCTORS, 2020, 54 (11) : 1503 - 1505
[7] Heating by exciton and biexciton recombination in GaAs/AlGaAs quantum wells
Belykh, V. V.
Kochiev, M. V.
PHYSICAL REVIEW B, 2015, 92 (04)
[8] ANOMALOUS EXCITON TEMPERATURES IN GAAS/ALGAAS QUANTUM-WELLS
COLVARD, C
BIMBERG, D
ALAVI, K
MAIERHOFER, C
NOURI, N
INSTITUTE OF PHYSICS CONFERENCE SERIES, 1989, (96): : 261 - 266
[9] Modeling of Exciton Exchange Interaction in GaAs/AlGaAs Quantum Wells
E. S. Khramtsov
B. F. Gribakin
A. V. Trifonov
I. V. Ignatiev
Semiconductors, 2020, 54 : 1503 - 1505
[10] ANOMALOUS EXCITON TEMPERATURES IN GAAS/ALGAAS QUANTUM-WELLS
COLVARD, C
BIMBERG, D
ALAVI, K
MAIERHOFER, C
NOURI, N
GALLIUM ARSENIDE AND RELATED COMPOUNDS 1988, 1989, : 261 - 266

← 1 2 3 4 5 →