Field-Induced Negative Differential Spin Lifetime in Silicon

被引:32
作者
Li, Jing [1 ,2 ]
Qing, Lan [3 ]
Dery, Hanan [3 ,4 ]
Appelbaum, Ian [1 ,2 ]
机构
[1] Univ Maryland, Dept Phys, College Pk, MD 20742 USA
[2] Univ Maryland, Ctr Nanophys & Adv Mat, College Pk, MD 20742 USA
[3] Univ Rochester, Dept Phys & Astron, Rochester, NY 14627 USA
[4] Univ Rochester, Dept Elect & Comp Engn, Rochester, NY 14627 USA
基金
美国国家科学基金会;
关键词
SEMICONDUCTORS; TRANSPORT; LOGIC;
D O I
10.1103/PhysRevLett.108.157201
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We show that the electric-field-induced thermal asymmetry between the electron and lattice systems in pure silicon substantially impacts the identity of the dominant spin relaxation mechanism. Comparison of empirical results from long-distance spin transport devices with detailed Monte Carlo simulations confirms a strong spin depolarization beyond what is expected from the standard Elliott-Yafet theory even at low temperatures. The enhanced spin-flip mechanism is attributed to phonon emission processes during which electrons are scattered between conduction band valleys that reside on different crystal axes. This leads to anomalous behavior, where (beyond a critical field) reduction of the transit time between spin-injector and spin-detector is accompanied by a counterintuitive reduction in spin polarization and an apparent negative spin lifetime.
引用
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页数:5
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