Development of gas cluster ion beam equipment

被引:0
作者
Mack, ME [1 ]
机构
[1] Epion Corp, Billerica, MA USA
来源
APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY | 2001年 / 576卷
关键词
D O I
暂无
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The development of a fully mechanically scanned gas cluster ion beam tool is described. Average surface roughnesses of better than 10 Angstrom can be achieved with this equipment.
引用
收藏
页码:991 / 994
页数:4
相关论文
共 10 条
[2]  
Forrester A. T., 1988, LARGE ION BEAMS
[3]  
HAGIWARA N, 1999, ION IMPLANTATION TEC
[4]  
KATSUMATA H, 1999, ION IMPLANTATION TEC
[5]  
MCEACHERN R, 1999, ION IMPLANTATION TEC
[6]  
NINAMI E, 1999, ION IMPLANTATION TEC
[7]  
RYDING G, 1997, ION IMPLANT TECHNOLO
[8]  
TOYODA N, 1999, ION IMPLANTATION TEC
[9]   IRRADIATION EFFECTS OF GAS-CLUSTER CO2 ION-BEAMS ON SI [J].
YAMADA, I ;
TAKAOKA, GH ;
CURRENT, MI ;
YAMASHITA, Y ;
ISHII, M .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 74 (1-2) :341-346
[10]  
Zhang H., 1999, ION SOURCES