High Current Density and Nonlinearity Combination of Selection Device Based on TaOx/TiO2/TaOx, Structure for One Selector-One Resistor Arrays

被引：144

作者：

Lee, Wootae ^{[1
]}

Park, Jubong ^{[1
]}

Kim, Seonghyun ^{[1
]}

Woo, Jiyong ^{[2
]}

Shin, Jungho ^{[1
]}

Choi, Godeuni ^{[2
]}

Park, Sangsu ^{[3
]}

Lee, Daeseok ^{[2
]}

Cha, Euijun ^{[1
]}

Lee, Byoung Hun ^{[1
,3
]}

Hwang, Hyunsang ^{[2
]}

机构：

[1] Gwangju Inst Sci & Technol, Sch Mat Sci & Engn, Kwangju 500712, South Korea

[2] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, Gyungbuk, South Korea

[3] Gwangju Inst Sci & Technol, Dept Nanobio Mat & Elect, Kwangju 500712, South Korea

来源：

ACS NANO | 2012年 / 6卷 / 09期

关键词：

resistance random access memory; selection device; nonlinearity; crested oxide barrier; one selector-one resistor; NONVOLATILE MEMORY; METAL; PERFORMANCE; NANOCROSSBAR;

D O I：

10.1021/nn3028776

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We demonstrate a high-performance selection device by utilizing the concept of crested oxide barrier to suppress the sneak current in bipolar resistive memory arrays. Using a TaOx,/TiO2/TaOx structure, high current density over 10(7) A cm(-2) and excellent non-linear characteristics up to 10(4) were successfully demonstrated. On the basis of the defect chemistry and SIMS depth profile result, we found that some Ta atoms gradually diffused into TiO2 film, and consequently, the energy band of the TiO2 film was symmetrically bent at the top and bottom TaOx/TiO2 interfaces and modified as a crested oxide barrier. Furthermore, the one selector-one resistor device exhibited significant suppression of the leakage current, indicating excellent selector characteristics.

引用

页码：8166 / 8172

页数：7

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