Simulation of quantum electronic transport in small devices: A Master equation approach

被引：0

作者：

Fischetti, MV ^{[1
]}

Laux, SE ^{[1
]}

Kumar, A ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Div Res, SRDC, Yorktown Hts, NY 10598 USA

来源：

2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST | 2003年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

We describe a formulation of-quantum electron transport in small devices based on the Master equation. We sketch its derivation from the Liouville-von Neumann equation, especially alluding to the subtle issues related to irreversibility. We also present results regarding ballistic and dissipative transport in double gate Si FETs.

引用

页码：467 / 470

页数：4

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