Microscopy and computational modelling to elucidate the enhancement factor for field electron emitters

被引：177

作者：

Edgcombe, CJ

Valdrè, U

机构：

[1] Univ Cambridge, Cavendish Lab, PCSMP, Cambridge CB3 0HE, England

[2] Elect Ltd, Cambridge CB3 7PR, England

[3] Univ Bologna, INFM, I-40126 Bologna, Italy

[4] Univ Bologna, Dept Phys, I-40126 Bologna, Italy

来源：

JOURNAL OF MICROSCOPY | 2001年 / 203卷 / 02期

关键词：

carbon contamination; carbon nanotips; field emitters; field enhancement factor; field factor; finite element computation; Fowler-Nordheim plots; reduction factor; scanning electron microscopy; threshold field; threshold voltage;

D O I：

10.1046/j.1365-2818.2001.00890.x

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

We report on the computation of the electric field at the surface of single-tip field emitters for a variety of geometries and wide range of geometrical parameters. In conjunction with experimental work, this has allowed the determination of quantities useful for characterizing and comparing the performance of field emitters. The ratio of the field at the tip surface to field at a tip supporting base (enhancement factor) has been calculated for hemispherical tips with parallel or conical shanks, for ratios of tip length to tip radius from 1 to 3000. Enhancement factors greater than 1000 are achievable with suitable tip geometry. The threshold voltage dependence on the tip-anode separation for cylindrical tips facing a flat anode has also been calculated and reported.

引用

页码：188 / 194

页数：7

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