Terrestrial Neutron Induced Failure in Silicon Carbide Power MOSFETs

被引：0

作者：

Rashed, Kazi ^{[1
,2
]}

Wilkins, R. ^{[1
,2
]}

Akturk, A. ^{[3
]}

Dwivedi, R. C. ^{[1
,2
]}

Gersey, B. B. ^{[2
]}

机构：

[1] Prairie View A&M Univ, Dept Elect & Comp Engn, Prairie View, TX 77446 USA

[2] Prairie View A&M Univ, Ctr Radiat Engn & Sci Space Explorat, Prairie View, TX 77446 USA

[3] CoolCAD Elect LLC, College Pk, MD 20740 USA

来源：

2014 IEEE RADIATION EFFECTS DATA WORKSHOP (REDW) | 2014年

关键词：

BURNOUT;

D O I：

暂无

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

The first observation of neutron induced single event catastrophic failures in silicon carbide (SiC) power MOSFETs, specifically 1200V 24A Cree CMF10120D SiC power MOSFETs, is presented. The stress voltage at which these failures were observed is V-DS> 800V. At the highest rated drain bias of 1200V (and V-GS= 0V), we expect that this discrete power MOSFET will not suffer a catastrophic failure in more than 200 years at sea level due to terrestrial neutrons. The knowledge of this failure probability is important for the integration of the nascent silicon carbide high power MOSFETs into next generation high efficiency power systems.

引用

页数：4

共 14 条

[1]

Abbate C., 2013, AP WORKSH ROM IT DEC

[2] Radiation Effects in Commercial 1200 V 24 A Silicon Carbide Power MOSFETs [J].

Akturk, A. ;

McGarrity, J. M. ;

Potbhare, S. ;

Goldsman, N. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2012, 59 (06) :3258-3264

[3]

[Anonymous], JESD89 JEDEC

[4] Terrestrial Neutron-Induced Single-Event Burnout in SiC Power Diodes [J].

Asai, Hiroaki ;

Sugimoto, Kenji ;

Nashiyama, Isamu ;

Iide, Yoshiya ;

Shiba, Kensuke ;

Matsuda, Mieko ;

Miyazaki, Yoshio .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2012, 59 (04) :880-885

[5]

Badhwar GD, 2000, RADIAT RES, V154, P697, DOI 10.1667/0033-7587(2000)154[0697:AIDALE]2.0.CO

[6]

[7]

Casey M., 2012, NEPP EL TECHN WORKSH

[8]

CLAEYS C, 2002, RAD EFFECTS ADV SEMI, pCH9

[9] Micronuclei induction in human fibroblasts exposed in vitro to Los Alamos high-energy neutrons [J].

Gersey, Brad ;

Sodolak, John ;

Hada, Megumi ;

Saganti, Prem ;

Wilkins, Richard ;

Cucinotta, Francis ;

Wu, Honglu .

ADVANCES IN SPACE RESEARCH, 2007, 40 (11) :1754-1757

[10] Neutron-Induced Failure in Silicon IGBTs, Silicon Super-Junction and SiC MOSFETs [J].

Griffoni, Alessio ;

van Duivenbode, Jeroen ;

Linten, Dimitri ;

Simoen, Eddy ;

Rech, Paolo ;

Dilillo, Luigi ;

Wrobel, Frederic ;

Verbist, Patrick ;

Groeseneken, Guido .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2012, 59 (04) :866-871

← 1 2 →