Second Harmonic Vibrational Mode of Substitutional Carbon in Cast-Grown Multicrystalline Silicon

被引：1

作者：

Ono, Haruhiko ^{[1
]}

Yamada-Kaneta, Hiroshi ^{[2
]}

机构：

[1] Kanagawa Ind Technol Ctr, Ebina, Kanagawa 2430435, Japan

[2] Niigata Univ, Niigata 9502181, Japan

来源：

APPLIED PHYSICS EXPRESS | 2011年 / 4卷 / 05期

关键词：

OXYGEN PRECIPITATION; ABSORPTION; COMPLEXES; CRYSTALS; NITROGEN;

D O I：

10.1143/APEX.4.051401

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Light-element impurities in multicrystalline silicon (mc-Si) used for fabricating photovoltaic cells have been studied by Fourier transform infrared spectroscopy. Using this method, a new infrared absorption peak at 1206 cm(-1) was found in B-doped mc-Si grown by the cast method with a Si(3)N(4)-coated crucible, and was attributed to B-N complexes. We have investigated this peak in detail and examined its origin, and we have concluded that it is not due to B-N complexes but arises from the second harmonic of the substitutional carbon (Cs), the fundamental peak of which is observed at 605 cm(-1). (C) 2011 The Japan Society of Applied Physics

引用

页数：3

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