Effect of heavy proton and neutron irradiations on epitaxial 4H-SiC Schottky diodes

被引：52

作者：

Sciortino, S

Hartjes, F

Lagomarsino, S

Nava, F

Brianzi, M

Cindro, V

Lanzieri, C

Moll, M

Vanni, P

机构：

[1] Univ Florence, Dipartimento Energet, I-50139 Florence, Italy

[2] INFN Florence, I-50019 Florence, Italy

[3] NIKHEF, NL-1098 SJ Amsterdam, Netherlands

[4] Univ Modena, INFN, I-41100 Modena, Italy

[5] Univ Modena, Dept Phys, I-41100 Modena, Italy

[6] Univ Ljubljana, Jozef Stefan Inst, SI-1000 Ljubljana, Slovenia

[7] Alenia Marconi Syst, I-00131 Rome, Italy

[8] CERN, EP TAI SD, CH-1211 Geneva, Switzerland

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2005年 / 552卷 / 1-2期

关键词：

C-V characteristic; CCE characteristics; epitaxial layers; particle detectors; Schottky diodes; minimum ionizing particles;

D O I：

10.1016/j.nima.2005.06.017

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

In this work we report electrical characterizations on heavily irradiated epitaxial H-4-SiC Schottky diodes. Even after an irradiation at a fluence of 1.4 x 10(16) p/cm(2) and 7 x 10(15) n/cm(2), we found the diodes still able to detect alpha and beta particles with a charge collection efficiency (CCE) ranging from 25 to 30% after proton irradiation and about 18% after neutron irradiation, at the highest reverse bias applied. This corresponds to a charge collection distance (CCD) of 7 mu m after the proton irradiation and 5 mu m after the neutron irradiation. As the irradiation level approaches the range similar to 10(15)/cm(2), the material behaves as intrinsic due to a very high compensation effect. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：138 / 145

页数：8

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