Controlling growth and field emission properties of silicon nanotube arrays by multistep template replication and chemical vapor deposition

被引：77

作者：

Mu, C ^{[1
]}

Yu, YX

Liao, W

Zhao, XS

Xu, DS

Chen, XH

Yu, DP

机构：

[1] Peking Univ, State Key Lab Struct Chem Unstable & Stable Speci, Coll Chem & Mol Engn, Beijing 100871, Peoples R China

[2] Peking Univ, Electron Microscopy Lab, Beijing 100871, Peoples R China

[3] Peking Univ, State Key Lab Mesoscop Phys, Sch Phys, Beijing 100871, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 11期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2042545

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A multistep template replication route was employed to fabricate highly ordered silicon nanotube (SiNT) arrays, in which annular nanochannel membranes were produced first, and then silicon was deposited into the annular nanochannels by pyrolytic decomposition of silane. Electron microscopy revealed that these SiNTs are highly crystalline and the wall thicknesses can be controlled by the spaces of the annular nanochannel. Field emission characterization showed that the turn-on field and threshold field for the SiNT arrays are about 5.1 V/mu m and 7.3 V/mu m, respectively. These results represent one of the lowest fields ever reported for Si field emission materials at technologically useful current densities. (c) 2005 American Institute of Physics.

引用

页数：3

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