Electrical and Optical Properties of ZAO Thin Films Prepared by Sol-Gel Dip-Coating Method

Firstly undoped ZnO thin films were prepared on glass substrates by Sol-Gel dip-coating (by assembled diminutive dip-coating device,), and radio-frequency magnetron sputtering respectively X-ray diffraction(XRD). Scanning Electron Microscopy(SEM), Spectrophotometer, Surface profilometry were used to characterize their properties. The results indicated:on the glass substrates, at the same annealed temperature, the films prepared by radio-frequency magnetron sputtering had more excellent crystallization quality Then, Al-doped (ZnO:Al(ZAO)) thin films were solely prepared on glass substrates by Sol-Gel dip-coating method(by assembled diminutive dip-coating device), Scanning Electron Microscopy(SEM), UV-Visible spectrophotometry(UV-Vis), digital four-point probe electrical resistance measurement were used to characterize their surface morphologies, transmission property film thickness, resistance etc. The results indicated: The morphologies of ZAO thin films were more compact when the Al3+ dopant concentration was 1.0at%; with increasing annealing temperature, the average grain size of the film increased, the resistance decreased. Under the Al3+ dopant concentration of 1.5at%, annealing temperature of 550 degrees C and annealing time of 2h the average transmissivity of the film exceeded 70% within the visible region and resistance was 5.9x10(-2) Omega.cm.