Compositionally controlled metal-insulator transition in Tl2-xInxTeO6

被引：2

作者：

Siritanon, Theeranun ^{[1
]}

Sleight, A. W. ^{[1
]}

Subramanian, M. A. ^{[1
]}

机构：

[1] Oregon State Univ, Dept Chem, Corvallis, OR 97331 USA

来源：

JOURNAL OF SOLID STATE CHEMISTRY | 2011年 / 184卷 / 04期

基金：

美国国家科学基金会;

关键词：

Oxides; Solid solution; Electrical properties; Metal-insulator transition; Percolation; SN-DOPED IN2O3; ELECTRONIC-STRUCTURE; CRYSTAL-STRUCTURE; ELECTRICAL-PROPERTIES; INDIUM TELLURATE; BAND-GAP; BETA-PBO2; IN2TEO6; SYSTEM; OXIDE;

D O I：

10.1016/j.jssc.2011.02.008

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

Tl2TeO6 and In2TeO6 are both known to crystallize in the Na2SiF6-type structure. We find Tl2TeO6 is metallic, whereas In2TeO6 is an insulator. We have prepared a complete Tl2-xInxTeO6 series in a search for a compositionally controlled metal-insulator transition that might be expected if a complete solid solution can be obtained. Unit cell edges and volume vary monotonically with no indication of a miscibility gap. The metal-insulator transition occurs at an x value of about 1.4, which can be rationalized on a percolation model. No superconductivity could be detected down to 5 K. (C) 2011 Elsevier Inc. All rights reserved.

引用

页码：877 / 880

页数：4

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