Compositionally controlled metal-insulator transition in Tl2-xInxTeO6

被引：2
|
作者：
Siritanon, Theeranun [1 ]
Sleight, A. W. [1 ]
Subramanian, M. A. [1 ]
机构：
[1] Oregon State Univ, Dept Chem, Corvallis, OR 97331 USA
来源：
JOURNAL OF SOLID STATE CHEMISTRY | 2011年 / 184卷 / 04期
基金：
美国国家科学基金会;
关键词：
Oxides; Solid solution; Electrical properties; Metal-insulator transition; Percolation; SN-DOPED IN2O3; ELECTRONIC-STRUCTURE; CRYSTAL-STRUCTURE; ELECTRICAL-PROPERTIES; INDIUM TELLURATE; BAND-GAP; BETA-PBO2; IN2TEO6; SYSTEM; OXIDE;
D O I：
10.1016/j.jssc.2011.02.008
中图分类号：
O61 [无机化学];
学科分类号：
070301 ; 081704 ;
摘要：
Tl2TeO6 and In2TeO6 are both known to crystallize in the Na2SiF6-type structure. We find Tl2TeO6 is metallic, whereas In2TeO6 is an insulator. We have prepared a complete Tl2-xInxTeO6 series in a search for a compositionally controlled metal-insulator transition that might be expected if a complete solid solution can be obtained. Unit cell edges and volume vary monotonically with no indication of a miscibility gap. The metal-insulator transition occurs at an x value of about 1.4, which can be rationalized on a percolation model. No superconductivity could be detected down to 5 K. (C) 2011 Elsevier Inc. All rights reserved.
引用
收藏
页码：877 / 880
页数：4
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