Operation and high-frequency performance of nanoscale unipolar rectifying diodes -: art. no. 212103

被引：79

作者：

Mateos, J ^{[1
]}

Vasallo, BG ^{[1
]}

Pardo, D ^{[1
]}

González, T ^{[1
]}

机构：

[1] Univ Salamanca, Dept Fis Aplicada, Salamanca 37008, Spain

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 21期

关键词：

D O I：

10.1063/1.1931051

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By means of the microscopic transport description supplied by a semiclassical two-dimensional Monte Carlo simulator, we provide an in depth explanation of the operation (based on electrostatic effects) of the nanoscale unipolar rectifying diode, so called self-switching diode, recently proposed in A. M. Song, M. Missous, P. Omling, A. R. Peaker, L. Samuelson, and W. Seifert, Appl. Phys. Lett. 83, 1881 (2003). The simple downscaling of this device and the intrinsically high electron velocity of InGaAs channels allows one to envisaging the fabrication of structures working in the THz range. We analyze the high-frequency performance of the diodes and provide design considerations for the optimization of the downscaling process. (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

共 9 条

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