LP MOCVD growth of InAlN/GaN HEMT heterostructure: comparison of sapphire, bulk SiC and composite SiCopSiC substrates for HEMT device applications

被引：7

作者：

Poisson, M. -A. di Forte ^{[1
]}

Sarazin, N. ^{[1
]}

Magis, M. ^{[1
]}

Tordjman, M. ^{[1
]}

Di Persio, J. ^{[1
]}

Langer, R. ^{[2
]}

Iliopoulos, E. ^{[3
,4
]}

Georgakilas, A. ^{[3
,4
]}

Kominou, P. ^{[5
]}

Guziewicz, M. ^{[6
]}

Kaminska, E. ^{[6
]}

Piotrowska, A. ^{[6
]}

Gaquiere, C. ^{[7
]}

Oualli, M. ^{[1
]}

Chartier, E. ^{[1
]}

Morvan, E. ^{[1
]}

Delage, S. ^{[1
]}

机构：

[1] Alcatel Thales III V Lab, F-91461 Marcoussis, France

[2] Soitec Picogiga, F-91961 Courtaboeuf, France

[3] Univ Crete, Dept Phys, Microelect Res Grp, GR-71003 Iraklion, Greece

[4] FORTH, IESL, GR-71110 Iraklion, Greece

[5] Aristote Univ, Thessaloniki, Greece

[6] Inst Electr Mat Technol, Warsaw, Poland

[7] IEMN, F-59652 Villeneuve Dascq, France

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 5 | 2010年 / 7卷 / 05期

关键词：

InAlN/GaN heterostructures; MOCVD; SiC and composite substrates; HEMT devices;

D O I：

10.1002/pssc.200983114

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper we report on low-pressure metalorganic vapour deposition of InAlN/GaN heterostructures grown on different substrates (Sapphire, bulk SiC, composite SiCopSiC) for HEMT applications, and on first device performances obtained with these heterostructures. Optimisation of the crystal growth on each kind of substrate has led to InAlN/GaN HEMT heterostructures grown on bulk SiC and on composite SiCopSiC substrates which are successfully compared, in terms of material quality, to the standard GaAlN/GaN HEMT heterostructures grown on bulk SiC substrates. First devices based on InAlN/GaN heterostructures grown on bulk SiC exhibit very good microwave performances, with output power of 10.3 W/mm at 10 GHz, similar to those obtained with GaAlN/GaN heterostructures, confirming the promising potential of InAlN material. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1317 / 1324

页数：8

共 3 条

[1] Comparison of AlN thin films grown on sapphire and cubic-SiC substrates by LP-MOCVD
Tanaka, Y
Hasebe, Y
Inushima, T
Sandhu, A
Ohoya, S
JOURNAL OF CRYSTAL GROWTH, 2000, 209 (2-3) : 410 - 414
[2] LP-MOCVD growth of GaN on silicon substrates -: comparison between AlAs and ZnO nucleation layers
Strittmatter, A
Krost, A
Türck, V
Strassburg, M
Bimberg, D
Bläsing, J
Hempel, T
Christen, J
Neubauer, B
Gerthsen, D
Christmann, T
Meyer, BK
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 59 (1-3): : 29 - 32
[3] Research on the epitaxial growth of Power/RF HEMT structures on n-GaN and Fe-doped SI-GaN Free-Standing Substrates by MOCVD
Wang, Xiao
Zhang, Yumin
Wang, Mengyi
Wang, Jianfeng
Xu, Ke
VACUUM, 2025, 235

← 1 →