Visible luminescence properties of (Ga1-xZnx)(N1-xOx) solid solution (x=0.22)

被引:12
作者
Lee, Yueh-Chien [1 ]
Lin, Tai-Yuan [2 ,3 ]
Wu, Chih-Wen [2 ,3 ]
Teng, Hsisheng [4 ]
Hu, Che-Chia [4 ]
Hu, Sheng-Yao [5 ]
Yang, Min-De [6 ]
机构
[1] Tungnan Univ, Dept Elect Engn, Taipei 22202, Taiwan
[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 20224, Taiwan
[3] Natl Taiwan Univ, Grad Inst Electroopt Engn, Taipei 20224, Taiwan
[4] Natl Cheng Kung Univ, Dept Chem Engn, Tainan 70101, Taiwan
[5] Tung Fang Design Univ, Dept Elect Engn, Kaohsiung 82941, Taiwan
[6] Inst Nucl Energy Res, Lungtan 32500, Taiwan
关键词
OPTICAL-PROPERTIES; TEMPERATURE-DEPENDENCE; SOLUTION PHOTOCATALYST; ELECTRONIC-PROPERTIES; LIGHT; PHOTOLUMINESCENCE; ZNO; GAN; LIFETIME; FILMS;
D O I
10.1063/1.3562163
中图分类号
O59 [应用物理学];
学科分类号
摘要
Temperature-dependent photoluminescence (PL) and time-resolved photoluminescence (TRPL) are measured for the (Ga(1-x)Zn(x))(N(1-x)O(x)) solid solution with x = 0.22 to study its luminescence properties. PL result shows that the material exhibits visible luminescence at around 1.87 eV (663 nm) with a broad emission band even at room temperature. The origin of luminescence mechanism can be attributed to the radiative recombination of the electrons bound to donors and the holes bound to acceptors. The investigation from the integrated PL intensity and TRPL as a function of temperature indicates that the activation energy for thermalizing the electrons bound to a donor dominates the luminescence behavior in the (Ga(1-x)Zn(x))(N(1-x)O(x)) solid solution. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3562163]
引用
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页数:5
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