Compact Modeling of pH-Sensitive FETs Based on 2-D Semiconductors

被引：8

作者：

El Grour, Tarek ^{[1
]}

Pasadas, Francisco ^{[2
]}

Medina-Rull, Alberto ^{[2
]}

Najari, Montassar ^{[3
]}

Marin, Enrique G. ^{[2
]}

Toral-Lopez, Alejandro ^{[2
]}

Ruiz, Francisco G. ^{[2
]}

Godoy, Andres ^{[2
]}

Jimenez, David ^{[4
]}

El Mir, Lassaad ^{[1
]}

机构：

[1] Gabes Univ, LAPHYMNE Lab, Gabes, Tunisia

[2] Univ Granada, PEARL Lab, Dept Elect & Tecnol Comp, Granada 18071, Spain

[3] Jazan Univ, Innovat & Entrepreneurship Ctr, Jazan 45142, Saudi Arabia

[4] Univ Autonoma Barcelona, Escola Engn, Dept Engn Elect, Bellaterra 08193, Spain

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2021年 / 68卷 / 11期

关键词：

Integrated circuit modeling; Sensitivity; Semiconductor device modeling; Threshold voltage; Solid modeling; Logic gates; Field effect transistors; 2-D material; electrolyte; field-effect transistor (FET); ion-sensitive FET (ISFET); pH sensor; transition metal dichalcogenide (TMD); Verilog-A; FIELD-EFFECT TRANSISTORS; LABEL-FREE; ELECTRONIC-STRUCTURE; DOUBLE-LAYER; CHANNEL; NOISE; RES2;

D O I：

10.1109/TED.2021.3112407

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a physics-based circuit-compatible model for pH-sensitive field-effect transistors based on 2-D materials. The electrostatics along the electrolyte-gated 2-D-semiconductor stack is treated by solving the Poisson equation, including the site-binding model and the Gouy-Chapman-Stern approach, while the carrier transport is described by the drift-diffusion theory. The proposed model is provided in an analytical form and then implemented in Verilog-A, making it compatible with standard technology computer-aided design tools employed for circuit simulation. The model is benchmarked against two experimental transition-metal-dichalcogenide (MoS2 and ReS2)-based ion sensors, showing excellent agreement when predicting the drain current, threshold voltage shift, and current/voltage sensitivity measurements for different pH concentrations.

引用

页码：5916 / 5919

页数：4

共 35 条

[1] Analytical Model of pH sensing Characteristics of Junctionless Silicon on Insulator ISFET [J].