Large-Scale Sublattice Asymmetry in Pure and Boron-Doped Graphene

被引：56

作者：

Usachov, Dmitry Yu. ^{[1
]}

Fedorov, Alexander V. ^{[1
,2
,3
]}

Vilkov, Oleg Yu. ^{[1
]}

Petukhov, Anatoly E. ^{[1
]}

Rybkin, Artem G. ^{[1
]}

Ernst, Arthur ^{[4
]}

Otrokov, Mikhail M. ^{[1
,5
,6
,7
]}

Chulkov, Evgueni V. ^{[1
,5
,6
,7
]}

Ogorodnikov, Ilya I. ^{[8
]}

Kuznetsov, Mikhail V. ^{[8
]}

Yashina, Lada V. ^{[9
]}

Kataev, Elmar Yu. ^{[9
]}

Erofeevskaya, Anna V. ^{[1
]}

Voroshnin, Vladimir Yu. ^{[1
]}

Adamchuk, Vera K. ^{[1
]}

Laubschat, Clemens ^{[10
]}

Vyalikh, Denis V. ^{[1
,5
,6
,10
,11
]}

机构：

[1] St Petersburg State Univ, 7-9 Univ Skaya Nab, St Petersburg 199034, Russia

[2] Univ Cologne, Phys Inst 2, Zulpicher Str 77, D-50937 Cologne, Germany

[3] IFW Dresden, POB 270116, D-01171 Dresden, Germany

[4] Max Planck Inst Mikrostrukturphys, Weinberg 2, D-06120 Halle, Germany

[5] DIPC, Dept Fis Mat, San Sebastian 20080, Spain

[6] CFM MPC UPV EHU, San Sebastian 20080, Spain

[7] Tomsk State Univ, Lenina Ave 36, Tomsk 634050, Russia

[8] Russian Acad Sci, Inst Solid State Chem, Ural Branch, Pervomayskaya St 91, Ekaterinburg 620990, Russia

[9] Moscow MV Lomonosov State Univ, Leniskie Gory 1-3, Moscow 199991, Russia

[10] Tech Univ Dresden, Inst Solid State Phys, D-01062 Dresden, Germany

[11] Basque Fdn Sci, Ikerbasque, Bilbao 48011, Spain

来源：

NANO LETTERS | 2016年 / 16卷 / 07期

关键词：

Graphene; boron; doping; sublattice asymmetry; electronic structure; photoemission spectroscopy; FIELD-EFFECT TRANSISTORS; MONOLAYER GRAPHITE; TRANSPORT; SURFACE; APPROXIMATION; NITROGEN; NI(111); GROWTH; CARBON;

D O I：

10.1021/acs.nanolett.6b01795

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The implementation of future graphene-based electronics is essentially restricted by the absence of a band gap in the electronic structure of graphene. Options of how to create a band gap in a reproducible and processing compatible manner are very limited at the moment. A promising approach for the graphene band gap engineering is to introduce a large-scale sublattice asymmetry. Using photoelectron diffraction and spectroscopy we have demonstrated a selective incorporation of boron impurities into only one of the two graphene sublattices. We have shown that in the well-oriented graphene on the Co(0001) surface the carbon atoms occupy two nonequivalent positions with respect to the Co lattice, namely top and hollow sites. Boron impurities embedded into the graphene lattice preferably occupy the hollow sites due to a site-specific interaction with the Co pattern. Our theoretical calculations predict that such boron-doped graphene possesses a band gap that can be precisely controlled by the dopant concentration. B-graphene with doping asymmetry is, thus, a novel material, which is worth considering as a good candidate for electronic applications.

引用

页码：4535 / 4543

页数：9

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