Gallium-arsenide deep-level pin tunnel diode with very negative conductance

被引：3

作者：

Pan, JL ^{[1
]}

McManis, JE ^{[1
]}

Grober, L ^{[1
]}

Woodall, JM ^{[1
]}

机构：

[1] Yale Univ, New Haven, CT 06520 USA

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 19期

关键词：

D O I：

10.1049/el:20030895

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first tunnel diodes utilising deep levels in low-temperature-grown gallium arsenide (GaAs) are demonstrated. At room temperature, the negative conductance per area of 1/1.2 kOmega mum(2) is the largest ever measured in GaAs tunnel diodes, which also show peak-to-valley current ratios as high as 19 and peaks of 1.6 kA/cm(2).

引用

页码：1411 / 1412

页数：2