Observation of excitonic transitions in InSb quantum wells

被引:23
作者
Dai, N [1 ]
Brown, F
Barsic, P
Khodaparast, GA
Doezema, RE
Johnson, MB
Chung, SJ
Goldammer, KJ
Santos, MB
机构
[1] Univ Oklahoma, Dept Phys & Astron, Norman, OK 73019 USA
[2] Univ Oklahoma, Lab Elect Properties Mat, Norman, OK 73019 USA
关键词
D O I
10.1063/1.122097
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report the observation of interband exciton transitions in InSb/AlxIn1-xSb multi-quantum-well samples. The exciton peaks are identified with the use of a simple quantum well model. The strain present in the InSb wells alters the spectrum significantly from that for unstrained III-V materials and makes it possible to use the exciton spectrum in determining the band offset. (C) 1998 American Institute of Physics. [S0003-6951(98)01934-2]
引用
收藏
页码:1101 / 1103
页数:3
相关论文
共 13 条
[1]  
AGAEV Y, 1972, SOV PHYS SEMICOND+, V5, P1330
[2]  
Bastard G., 1988, WAVE MECH APPL SEMIC
[3]  
Dingle R., 1975, Festkorperprobleme, V15, P21
[4]   MOTIONALLY DEPENDENT BOUND-STATES IN SEMICONDUCTOR QUANTUM-WELLS [J].
DOEZEMA, RE ;
DREW, HD .
PHYSICAL REVIEW LETTERS, 1986, 57 (06) :762-765
[5]  
GOLDAMMER KJ, IN PRESS J VAC SCI B
[6]   OPTICAL INVESTIGATION OF HIGHLY STRAINED INGAAS-GAAS MULTIPLE QUANTUM-WELLS [J].
JI, G ;
HUANG, D ;
REDDY, UK ;
HENDERSON, TS ;
HOUDRE, R ;
MORKOC, H .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (08) :3366-3373
[7]   INFRARED MAGNETOOPTICAL AND PHOTOLUMINESCENCE STUDIES OF THE ELECTRONIC-PROPERTIES OF IN(AS,SB) STRAINED-LAYER SUPERLATTICES [J].
KURTZ, SR ;
BIEFELD, RM .
PHYSICAL REVIEW B, 1991, 44 (03) :1143-1149
[8]  
LANDOLTBORNSTEI, 1982, NUMERICAL DATA FUNCT, V17
[9]   Molecular-beam epitaxial growth and characterization of AlxIn1-xSb/InSb quantum well structures [J].
Liu, WK ;
Zhang, XM ;
Ma, WL ;
Winesett, J ;
Santos, MB .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (03) :2339-2342
[10]   OPTICAL INVESTIGATION OF A NEW TYPE OF VALENCE-BAND CONFIGURATION IN INXGA1-XAS-GAAS STRAINED SUPERLATTICES [J].
MARZIN, JY ;
CHARASSE, MN ;
SERMAGE, B .
PHYSICAL REVIEW B, 1985, 31 (12) :8298-8301