Thickness dependence of Cr-doped VO2 thin films deposition by reactive pulsed magnetron sputtering

Due to the interesting phase transition properties, Vanadium dioxide is a promising materials for smart windows. But phase transition temperature of 68 degrees C is high for this application. Doping is an useful method for transition temperature reducing in previous works. In this paper, different thickness VO2 films were prepared by reactive pulsed magnetron sputtering, and a novel doping method was employed to reduce transition temperature. The results of XRD, Raman, transmittance spectra, and thermal hysteresis reveal that the transition temperature of un-doped samples is about 54 similar to 58 degrees C, and the increasing of phase transition amplitude and optical transmittance in visible decreasing with film thickness was observed. While for doped samples, all the transition temperatures reduced below 37 degrees C. For the thin thickness 12.5nm and 25nm, which phase transition performance deteriorated seriously. The thickness 25nm deposited for 1.5 h has the optimal performance of high optical transmittance and high IR adjustment ability.